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| Ordering number : ENN8182 CPH6613 CPH6613 Features * * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Composite type with two MOSFETs contained in a single package facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm)1unit Conditions Ratings 20 12 2.5 10 0.9 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=20V, VGS=0 VGS= 8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1.5A ID=1.5A, VGS=4V ID=0.8A, VGS=2.5V ID=0.4A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 20 1 10 0.4 2.0 3.4 70 95 130 270 60 53 95 135 198 1.3 typ max Unit V A A V S m m m pF pF pF Marking : FZ Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12505PE TS IM TB-00001086 No.8182-1/4 CPH6613 Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A VDS=10V, VGS=4V, ID=2.5A IS=2.5A, VGS=0 Ratings min typ 10 44 37 38 4.0 0.6 1.9 0.91 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2238 2.9 6 5 4 0.15 0.6 0.05 1 2 0.4 0.7 0.9 0.2 3 0.95 0.6 1.6 2.8 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 SANYO : CPH6 Switching Time Test Circuit VIN 4V 0V VIN ID=1.5A RL=6.67 VDD=10V 0.2 Electrical Connection 6 5 4 D PW=10s D.C.1% VOUT 1 G 2 3 1 : Gate1 2 : Source2 3 : Gate2 4 : Drain2 5 : Source1 6 : Drain1 Top view CPH6613 P.G 50 S No.8182-2/4 CPH6613 2.5 ID -- VDS 4 ID -- VGS VDS=10V 2.0 Drain Current, ID -- A 4.0 V V 2.0 1.5 Drain Current, ID -- A 2.5 V 3 2 1.0 1.5V 0.5 1 Ta= 25 C 1.0 0 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 VDS=1.0V 0.40 0.45 0.50 0 0 0.5 1.5 2.0 2.5 3.0 IT07183 Drain-to-Source Voltage, VDS -- V 400 IT07182 250 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 0.8A 300 250 200 150 100 50 0 1 3 5 7 9 11 IT07184 Static Drain-to-Source On-State Resistance, RDS(on) -- m ID=1.5A Ta=25C 200 0.4A 150 100 50 0 --60 --40 --20 0 75 C 20 RDS(on) -- Ta =1.8V A, V GS I D=0.4 =2.5V A, V GS I D=0.8 4.0V , V GS= I D=1.5A --25 C 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, yfs -- S 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0.001 2 3 5 70.01 23 5 7 0.1 23 5 7 1.0 23 yfs -- ID Ambient Temperature, Ta -- C 7 5 3 2 IT07185 IF -- VSD VGS=0 VDS=10V Forward Current, IF -- A C 25 --2 5 C 1.0 7 5 3 2 0.1 7 5 3 2 = Ta Drain Current, ID -- A 7 5 3 5 7 10 IT07186 0.01 0.3 0.4 0.5 0.6 Ta= 7 75 C 5C 25 C --25 C 0.7 0.8 0.9 1.0 1.1 SW Time -- ID VDD=10V VGS=4V Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT07187 Switching Time, SW Time -- ns 2 Ciss 100 7 5 3 2 10 7 5 3 2 1.0 0.01 td (off) tf 100 7 5 3 2 tr Coss Crss td(on) 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT07188 0 2 4 6 8 10 12 14 16 18 20 Drain Current, ID -- A Drain-to-Source Voltage, VDS -- V IT07189 No.8182-3/4 CPH6613 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 IT07190 VGS -- Qg VDS=10V ID=2.5A Drain Current, ID -- A 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=10A <10s Gate-to-Source Voltage, VGS -- V 10 ID=2.5A 10 1m s 0 s DC m op 10 er ati on s 0m s 25 Operation in this area is limited by RDS(on). (T a= C ) 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Total Gate Charge, Qg -- nC 1.0 PD -- Ta M ou Drain-to-Source Voltage, VDS -- V IT07191 Allowable Power Dissipation, PD -- W 0.9 0.8 nt ed on ac 0.6 er am ic bo ar d 0.4 (9 00 m m2 ! 0. 0.2 8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT07192 Note on usage : Since the CPH6613 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2005. Specifications and information herein are subject to change without notice. PS No.8182-4/4 |
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